Credit: Georgia Tech Photo: Rob Felt
Professor John Cressler led a Georgia Tech team that recently demonstrated the world's fastest silicon-based device to date, in collaboration with IHP-Innovations for High Performance Microelectronics in Germany. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.