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  • Top and cross-sectional views of thread based transistor. Source (S) and drain (D) wires are tied to carbon nanotube coated thread, dipped in an electrolytic gate gel.  A gate wire is connected to the gel to trigger flow of electrons through the transistor when the gate is above a threshold voltage.
    Nano Lab, Tufts University
    Top and cross-sectional views of thread based transistor. Source (S) and drain (D) wires are tied to carbon nanotube coated thread, dipped in an electrolytic gate gel. A gate wire is connected to the gel to trigger flow of electrons through the transistor when the gate is above a threshold voltage.
  • Figure 1 – manufacture of thread based transistors (TBTs)
a)	Linen thread
b)	Attachment of source (S) and drain (D) thin gold wires
c)	Drop casting of carbon nanotubes on the surface of the thread
d)	Application of electrolyte infused gel (ionogel) gate material
e)	Attachment of the gate wire (G)
f)	Cross-sectional view of TBT. 

Electrolytes
EMI: 1-ethyl-3methylimidazolium 
TFSI: bis(trifluoromethylsulfonyl)imide
    Nano Lab, Tufts University
    Figure 1 – manufacture of thread based transistors (TBTs) a) Linen thread b) Attachment of source (S) and drain (D) thin gold wires c) Drop casting of carbon nanotubes on the surface of the thread d) Application of electrolyte infused gel (ionogel) gate material e) Attachment of the gate wire (G) f) Cross-sectional view of TBT. Electrolytes EMI: 1-ethyl-3methylimidazolium TFSI: bis(trifluoromethylsulfonyl)imide
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