For more information, contact: Reid Maness, Communications Director 919-541-7044, FAX 919-541-9737 [email protected] http://www.rti.org

Electronics Industry Gets $23 for Every $1 Spent on Simulation Models

Society has enjoyed important benefits from mathematical models developed by National Institute of Standards and Technology (NIST) that simulate the performance of electronic components called insulated-gate bipolar transistors (known as IGBTs), according to a recently completed analysis by the Research Triangle Institute (RTI) in North Carolina.

The models were introduced in 1990. Since that time, the payoff to U.S. industry as a whole--and society in general--has been estimated at about 23 to 1, meaning $23 of benefits have been generated for every $1 spent on the modeling program. These benefits are based on the reduced cost of designing new products using simulation modeling.

IGBTs are electronic switches that enable sophisticated electronic circuits to use small amounts of electricity to control devices that require much larger amounts of electricity. Applications include automotive ignition systems, compressors for refrigeration and air conditioning, and "adjustable speed drives" that enable electric motors to run more efficiently and provide more accurate control of precision equipment such as robotics and X-ray machines.

The mathematical models have helped industry decrease production costs. Consumers have enjoyed higher quality products at lower prices. The environment has benefited through the increased energy efficiency of products using IGBTs. The models were developed by Allen Hefner, an electrical engineer in the Semiconductor Electronics Division of NIST's Electronics and Electrical Engineering Laboratory. They are used in software to simulate how IGBTs perform, enabling manufacturers to design and perfect "virtual prototypes" before investing in the parts, material and labor needed to build the actual prototypes.

Economic and social benefits are detailed in a report, "Benefit Analysis for IGBT Power Device Simulation Modeling (NIST Planning Report 99-3)," which is available on RTI's web site (click "publications," then "economic analysis of technology").

The report also is available at http://www.nist.gov/director/planning/strategicplanning.htm and may be requested by e-mail to [email protected]. Hardcopy is available through the NIST Inquiries Office, (301) 975-NIST, fax: (301) 926-1630, [email protected].

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