Patterned Doping for Constructing 2D Lateral p-n junction via Ion Implantation
Chinese Academy of SciencesFor the practical application of 2D semiconductors, it is crucial to construct high-quality p-n junctions. Scientist in China developed a low-energy ion implantation system for constructing 2D lateral p-n homojunction. The conductivity type of WS2 was successfully realized to transform from n-type conduction to p-type conduction, and the universality of this method was demonstrated.